| PART |
Description |
Maker |
| AP2122AK-3.0TRG1 AP2122AK-3.3TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| AP2122 AP2122AK-3.3TRE1 AP2122AK-1.5TRE1 AP2122AK- |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCDSEMI
|
| AP2121AK-1.5TRE1 AP2121AK-2.5TRE1 AP2121AK-2.8TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCDSEMI
|
| AGP2125K-2.8TRG1 AP2125KS-2.5TRE1 AP2125KS-2.5TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
Diodes
|
| AP2127K-3.3TRG1 AP2127K-ADJTRG1 AP2127K-1.5TRG1 AP |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| CES2301 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2321 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| FDC608PZ |
High performance trench technology for extremely low RDS
|
TY Semiconductor Co., Ltd
|
| CES2316 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
